unisonic technologies co., ltd 2n7002ll preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2010 unisonic technologies co., ltd qw-r502-284.c 60v, 115ma, n-channel mosfet ? description the utc 2n7002ll uses advanced technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) = 7.5 ? @v gs = 10 v * low reverse transfer capacitance ( c rss = typical 5 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 2.gate 1.source 3. drain sot-23-3 1 2 3 (jedec to-236) ? ordering information pin assignment ordering number package 1 2 3 packing 2N7002LLG-AE2-R sot-23-3 s g d tape reel ? marking
2n7002ll preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-284.c ? absolute maximum ratings (t a =25 c) parameter symbol ratings unit drain-source voltage v dss 60 v drain-gate voltage (r g =1.0m ? ) v dgr 60 v continuous v gss 20 v gate-source voltage non-repetitive (t p Q 50 s) v gsm 40 v continuous(t c =25c) 115 drain current pulse(note 2) i d 800 ma 225 mw power dissipation (t a = 25c) derate above 25c p d 1.8 mw /c junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width Q 300 s, duty cycle Q 2% ? thermal data parameter symbol ratings unit junction to ambient ja 556 c/w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =10a 60 v drain-source leakage current i dss v ds =60v, v gs =0v (t j =25c) 1.0 a gate-source leakage current i gss v gs =20v, v ds =0v 100 na on characteristics (note) gate threshold voltage v gs(th) v ds =v gs , i d =250 a 1.0 2.5 v v gs =10v, i d =500 ma 3.75 drain-source on-state voltage v ds(on) v gs =5v, i d =50ma 0.375 v on-state drain current i d(on) v ds R 2.0v ds(on) , v gs =10v 500 ma v gs =10v, i d =500ma(t c =25c) 7.5 static drain-source on-resistance r ds(on) v gs =5v, i d =50ma(t c =25c) 7.5 ? forward transconductance g fs v ds R 2.0v ds(on) , i d =200ma 80 ms dynamic parameters input capacitance c iss 50 pf output capacitance c oss 25 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mhz 5.0 pf switching parameters turn-on delay time t d(on) 20 ns turn-off delay time t d(off) v dd =25v, i d =500ma, v gen =10v, r g =25 ? , r l =50 ? 40 ns source- drain diode ratings and characteristics diode forward voltage v sd i s =115ma, v gs =0v 1.5 v maximum body-diode continuous current i s 115 ma source current pulsed i sm 800 ma note: pulse test: pulse width 300 s, duty cycle 2.0%.
2n7002ll preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-284.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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